DocumentCode :
881397
Title :
A physical explanation of secondary breakdown in transistors
Author :
Lewis, E.T.
Author_Institution :
Raytheon Company, Sudbury, Mass.
Volume :
54
Issue :
5
fYear :
1966
fDate :
5/1/1966 12:00:00 AM
Firstpage :
788
Lastpage :
789
Keywords :
Degradation; Delay effects; Electric breakdown; Electrons; Laboratories; Physics; Space charge; Voltage;
fLanguage :
English
Journal_Title :
Proceedings of the IEEE
Publisher :
ieee
ISSN :
0018-9219
Type :
jour
DOI :
10.1109/PROC.1966.4851
Filename :
1446781
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=881397
