• DocumentCode
    881414
  • Title

    Charge injection imaging: operating techniques and performances characteristics

  • Author

    Burke, Hubert K. ; Michon, Gerald J.

  • Volume
    11
  • Issue
    1
  • fYear
    1976
  • fDate
    2/1/1976 12:00:00 AM
  • Firstpage
    121
  • Lastpage
    128
  • Abstract
    The charge-injection device (CID) imaging technique employs intracell transfer and injection to sense photon-generated charge at each sensing site. Sites are addressed by an X-Y coincident-voltage technique that is not restricted to standard scanning. Free-format (random) site selection is possible. An epitaxial structure provides a buried collector to prevent recollection of the injected charge. In sequential injection, the charge is injected into the substrate and the resulting displacement current sensed. In parallel injection, the functions of signal charge detection and injection have been separated. The injection operation is used to reset (empty) the charge storage capacitors after line readout has been completed. Nondestructive readout (NDRO) is possible by deferring the injection operation. Low-loss NDRO operation has been achieved using a cooled imager.
  • Keywords
    Charge-coupled devices; Image sensors; Monolithic integrated circuits; charge-coupled devices; image sensors; monolithic integrated circuits; Biographies; Charge coupled devices; Electron devices; FETs; Helium; Insulation; Interface states; Metallization; Notice of Violation; Physics;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1976.1050686
  • Filename
    1050686