DocumentCode
881414
Title
Charge injection imaging: operating techniques and performances characteristics
Author
Burke, Hubert K. ; Michon, Gerald J.
Volume
11
Issue
1
fYear
1976
fDate
2/1/1976 12:00:00 AM
Firstpage
121
Lastpage
128
Abstract
The charge-injection device (CID) imaging technique employs intracell transfer and injection to sense photon-generated charge at each sensing site. Sites are addressed by an X-Y coincident-voltage technique that is not restricted to standard scanning. Free-format (random) site selection is possible. An epitaxial structure provides a buried collector to prevent recollection of the injected charge. In sequential injection, the charge is injected into the substrate and the resulting displacement current sensed. In parallel injection, the functions of signal charge detection and injection have been separated. The injection operation is used to reset (empty) the charge storage capacitors after line readout has been completed. Nondestructive readout (NDRO) is possible by deferring the injection operation. Low-loss NDRO operation has been achieved using a cooled imager.
Keywords
Charge-coupled devices; Image sensors; Monolithic integrated circuits; charge-coupled devices; image sensors; monolithic integrated circuits; Biographies; Charge coupled devices; Electron devices; FETs; Helium; Insulation; Interface states; Metallization; Notice of Violation; Physics;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1976.1050686
Filename
1050686
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