Analysis of AlGaAs/GaAs solar cell structures by optical reflectance spectroscopy

Author

Sanfacon, Michael M. ; Tobin, Stephen P.

Author_Institution

Spire Corp., Bedford, MA, USA

Volume

37

Issue

2

fYear

1990

fDate

2/1/1990 12:00:00 AM

Firstpage

450

Lastpage

454

Abstract

The control of the thickness and composition of the GaAs cap and AlGaAs window layers is essential to the fabrication of high-efficiency AlGaAs/GaAs heteroface solar cells. The use of optical reflectance spectroscopy for the analysis of these structures is presented. The calculation of the reflectance of a system of thin films is described along with the computer program, REFIT, for the analysis of GaAs cell structures. Results are presented for structures at different stages in the solar cell fabrication process, and the method is applied to the analysis of the oxidation of high AlAs mole fraction AlGaAs layers

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; oxidation; reflectivity; solar cells; AlGaAs window layers; AlGaAs-GaAs; GaAs cap; III-V semiconductors; REFIT; cell structure analysis; computer program; fabrication process; high AlAs mole fraction; high-efficiency; optical model; optical reflectance spectroscopy; oxidation; solar cell structures; thin films; Gallium arsenide; Optical device fabrication; Optical devices; Optical films; Optical sensors; Photovoltaic cells; Reflectivity; Semiconductor device modeling; Spectroscopy; Transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.46382

Filename

46382