• DocumentCode
    881493
  • Title

    Long wavelength quantum well lasers with InGaAs/InP superlattice optical confinement and barrier layers

  • Author

    Ginty, A. ; Lambkin, J.D. ; Considine, L. ; Kelly, W.M.

  • Author_Institution
    Univ. Coll., Cork, Ireland
  • Volume
    29
  • Issue
    8
  • fYear
    1993
  • fDate
    4/15/1993 12:00:00 AM
  • Firstpage
    684
  • Lastpage
    685
  • Abstract
    Long wavelength, separate confinement heterostructure, ridge waveguide laser diodes using InGaAs/InP short period superlattices and InGaAs quantum wells have been demonstrated. The short period superlattices replace the more conventional quaternary alloys. These lasers have threshold current densities of 1.9 kA/cm2, device efficiencies of 0.16 mW/mA and a characteristic temperature T0 of 56 K.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; optical waveguides; semiconductor lasers; semiconductor superlattices; InGaAs-InP; barrier layers; long wavelength semiconductor lasers; quantum well lasers; ridge waveguide laser diodes; separate confinement heterostructure; short period superlattices; superlattice optical confinement;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930458
  • Filename
    209950
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881493