DocumentCode
881509
Title
Twin layer PCCD performance for different doping levels of the surface layer
Author
Peek, Herman L.
Volume
11
Issue
1
fYear
1976
fDate
2/1/1976 12:00:00 AM
Firstpage
167
Lastpage
170
Abstract
The performance and technology of the twin layer PCCD has been investigated for different doping levels of the surface layer. With respect to charge transfer efficiency and charge handling capacity, optimum conditions for the doping level of the surface layer can be established.
Keywords
Charge-coupled devices; charge-coupled devices; Capacitance; Charge coupled devices; Charge transfer; Crosstalk; Diffusion bonding; Doping; Etching; Lead compounds; Metallization; Substrates;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1976.1050693
Filename
1050693
Link To Document