A new nonlinear capacitance model of millimeter wave power PHEMT for accurate AM/AM-AM/PM simulations

Author

Forestier, S. ; Gasseling, T. ; Bouysse, Ph. ; Quere, R. ; Nebus, J.M.

Author_Institution

IRCOM, Univ. of Limoges, Brive, France

Volume

14

Issue

1

fYear

2004

Firstpage

43

Lastpage

45

Abstract

A new one-dimensional (1-D) nonlinear gate-source Cgs and gate-drain Cgd capacitance model designed for power-PHEMT transistors is presented. The capacitance values are extracted from measured [S] parameters, along a load-line corresponding to a power performance of an optimum amplifier design. The reliable resulting model predicts adequate power performances with small or large signals in reduced CPU time. This new model is validated by comparisons between load-pull power measurements at 25.5 GHz and harmonic balance simulations. It reveals good accuracy for AM/AM and AM/PM predictions.

Keywords

S-parameters; amplitude modulation; capacitance; microwave power transistors; millimetre wave power transistors; phase modulation; power HEMT; semiconductor device models; 25.5 GHz; AM/AM-AM/PM simulations; capacitance values; gate-drain; harmonic balance simulations; large signals; load-line; load-pull power measurements; millimeter wave power PHEMT; nonlinear capacitance model; nonlinear gate-source; optimum amplifier design; phase conversion; power performance; power-PHEMT transistors; reduced CPU time; small signals; Capacitance measurement; FETs; Linearity; Millimeter wave technology; Millimeter wave transistors; PHEMTs; Power amplifiers; Power measurement; Power system harmonics; Predictive models;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2003.820635

Filename

1264058