• DocumentCode
    881572
  • Title

    1/f noise and interface trap density in high field stressed pMOS transistors

  • Author

    Augier, P. ; Schrimpf, R.D. ; Galloway, Kenneth F.

  • Volume
    29
  • Issue
    8
  • fYear
    1993
  • fDate
    4/15/1993 12:00:00 AM
  • Firstpage
    696
  • Lastpage
    697
  • Abstract
    Experimental results for pMOS transistors subjected to high field stressing are reported. 1/f noise and interface trap density increase with stress time. A direct relationship between the increase in 1/f noise and interface trap density during the high field stressing is observed.
  • Keywords
    electron traps; high field effects; hole traps; insulated gate field effect transistors; interface electron states; random noise; semiconductor device noise; semiconductor device testing; 1/f noise; MOSFET; high field stressed; high field stressing; interface trap density; pMOS transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19930466
  • Filename
    209958
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881572