Title :
Shortest wavelength (607 nm) operations of GaInP/AlInP distributed Bragg reflector lasers
Author :
Jang, D.-H. ; Kaneko, Yuya ; Kishino, Katsumi
Author_Institution :
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Abstract :
Visible light GaInP/AlInP distributed Bragg reflector (DBR) lasers with second order gratings (184.7 nm period) were fabricated by gas source molecular beam epitaxy (GSMBE) and the conventional interference method for the first time. Single mode operations of GaInP/AlInP DBR lasers were maintained up to over 1.8 times the threshold currents with a wavelength of 607 nm at 140 K and a wavelength shift of 0.033 nm/K. No mode hopping was observed in a temperature range from 120 to 165 K.
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; distributed Bragg reflector lasers; gallium compounds; indium compounds; integrated optics; laser modes; laser transitions; molecular beam epitaxial growth; semiconductor junction lasers; 120 to 165 K; 140 K; 607 nm; DBR lasers; GSMBE; GaInP-AlInP; distributed Bragg reflector; gas source MBE; molecular beam epitaxy; second order gratings; semiconductor lasers; single mode operation; visible light lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920269
