DocumentCode
881679
Title
Shortest wavelength (607 nm) operations of GaInP/AlInP distributed Bragg reflector lasers
Author
Jang, D.-H. ; Kaneko, Yuya ; Kishino, Katsumi
Author_Institution
Dept. of Electr. & Electron. Eng., Sophia Univ., Tokyo, Japan
Volume
28
Issue
4
fYear
1992
Firstpage
428
Lastpage
430
Abstract
Visible light GaInP/AlInP distributed Bragg reflector (DBR) lasers with second order gratings (184.7 nm period) were fabricated by gas source molecular beam epitaxy (GSMBE) and the conventional interference method for the first time. Single mode operations of GaInP/AlInP DBR lasers were maintained up to over 1.8 times the threshold currents with a wavelength of 607 nm at 140 K and a wavelength shift of 0.033 nm/K. No mode hopping was observed in a temperature range from 120 to 165 K.
Keywords
III-V semiconductors; aluminium compounds; diffraction gratings; distributed Bragg reflector lasers; gallium compounds; indium compounds; integrated optics; laser modes; laser transitions; molecular beam epitaxial growth; semiconductor junction lasers; 120 to 165 K; 140 K; 607 nm; DBR lasers; GSMBE; GaInP-AlInP; distributed Bragg reflector; gas source MBE; molecular beam epitaxy; second order gratings; semiconductor lasers; single mode operation; visible light lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19920269
Filename
126407
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