Title :
Optical pulse generation with high repetition rate by sinusoidally-driven InGaAs/InAlAs multiquantum well modulator
Author :
Wakita, Ken ; Kotaka, I. ; Mitomi, O. ; Asai, Hiroki ; Asobe, M.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
4/15/1993 12:00:00 AM
Abstract :
A 20 GHz optical pulse train was generated by a sinusoidally-driven InGaAs/InAlAs multiquantum well intensity modulator operating at low voltages (from -2 to -3 V DC bias with a 3.2 V peak-to-peak RF signal). An approximately transform-limited optical pulse train width of 8 ps and a spectral width of 40 GHz were obtained.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; pulse generators; semiconductor quantum wells; -3 to -2 V; 20 GHz; InGaAs-InAlAs; MQW; high repetition rate; intensity modulator; low voltages; multiquantum well modulator; optical pulse train; pulse generation; semiconductors; sinusoidally-driven;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930480
