Title :
Millimeter-wave pulsed IMPATT diode oscillators
Author :
Ying, Robert S. ; English, David L. ; Weller, Kenneth P. ; Nakaji, Edward M. ; Lee, Don H. ; Bernick, Robert L.
fDate :
4/1/1976 12:00:00 AM
Abstract :
Double-drift silicon IMPATT diodes were fabricated for pulse source application at 35, 94, and 140 GHz. The diodes were operated with 300 ns pulsewidth and a 1.5 percent duty cycle. All sources exhibited a change in output frequency of >1 percent throughout the duration of the pulsewidth with <1 dB peak power variation. Peak pulse output power levels of 10, 2, and 0.7 W were achieved in each of the three frequency bands, respectively.
Keywords :
IMPATT diodes; Microwave oscillators; Solid-state microwave circuits; microwave oscillators; solid-state microwave circuits; Admittance; Charge carrier processes; Copper; Current density; Diodes; Doping; Frequency; Neodymium; Oscillators; Temperature;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1976.1050715
