Title :
Microwave power InP/InGaAs/InP double-heterojunction bipolar transistors
Author :
Song, Jong-In ; Hong, Woo-Pyo ; Bhat, Ritesh ; Hayes, J.R. ; Wei, C.J. ; Hwang, James C. M.
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
4/15/1993 12:00:00 AM
Abstract :
The first demonstration of the microwave power performance of an InP/InGaAs/InP double-heterojunction bipolar transistor (DHBT) is reported. A collector-emitter breakdown voltage in excess of 14 V was achieved with a current gain of 70. A maximum output power density of approximately 1 W/mm emitter length was measured at 5 GHz with a power gain of 8 dB. The results show the significant potential of InP based DHBTs for microwave power applications.
Keywords :
III-V semiconductors; electric breakdown of solids; gallium arsenide; heterojunction bipolar transistors; indium compounds; solid-state microwave devices; 14 V; 5 GHz; 8 dB; DHBT; InP-InGaAs-InP; SHF; collector-emitter breakdown voltage; double-heterojunction bipolar transistors; microwave power performance; power gain;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19930484
