DocumentCode :
881764
Title :
Electrical characteristics of p type germanium layers doped by ion implantation
Author :
Jones, K.C.
Volume :
5
Issue :
20
fYear :
1969
Firstpage :
499
Lastpage :
500
Abstract :
Layers of ptype germanium have been produced by bombardment of ntype specimens with 40keV Ga+ or In+ ions. Measurements of Hall mobility and carrier concentration as a function of depth suggest that the degradation of mobility due to the radiation damage produced by the implant is completely removed after anneal. 50% of Ga ions and 10¿15% of In ions became electrically active. These percentages were independent of dose over the range measured (1011cm-2 3 × 1013cm-2).
Keywords :
heat treatment; ion beam effects; ion implantation; semiconductor doping;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19690378
Filename :
4210596
Link To Document :
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