• DocumentCode
    881827
  • Title

    CMOS/SOS semi-static shift registers

  • Author

    Ipri, A.C. ; Sarace, J.C.

  • Volume
    11
  • Issue
    2
  • fYear
    1976
  • fDate
    4/1/1976 12:00:00 AM
  • Firstpage
    337
  • Lastpage
    338
  • Abstract
    Complementary metal-oxide-semiconductor (CMOS) technology has been combined with thin silicon on sapphire films (SOS) for the fabrication of shift registers designed for full TTL compatibility d.c. storage capability, 20 MHz operating frequency, single phase clock and data inputs, and double rail data outputs. Typical power dissipation levels were on the order of 500 nW per stage during standby and 250 μW per stage when operating at 20 MHz.
  • Keywords
    Digital integrated circuits; Monolithic integrated circuits; Shift registers; Transistor-transistor logic; digital integrated circuits; monolithic integrated circuits; shift registers; transistor-transistor logic; CMOS technology; Clocks; Fabrication; Frequency; Inverters; Laboratories; Resistors; Semiconductor films; Shift registers; Silicon;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/JSSC.1976.1050724
  • Filename
    1050724
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=881827