DocumentCode :
881836
Title :
Radiation Damage Effects of Electrons and H, He, O, Cl and Cu Ions on GaAs JFETs
Author :
Knudson, A.R. ; Campbell, A.B. ; Stapor, W.J. ; Shapiro, P. ; Mueller, G.P. ; Zuleeg, R.
Author_Institution :
Naval Research Laboratory Washington, D. C. 20375-5000
Volume :
32
Issue :
6
fYear :
1985
Firstpage :
4388
Lastpage :
4392
Abstract :
Radiation damage effects have been studied in GaAs EJFETs for a variety of different energetic particles. Differences in damage rates are consistent with simple displacement damage and carrier removal.
Keywords :
Apertures; Detectors; Electrons; Gallium arsenide; Helium; Ionization; JFETs; Neutrons; Particle scattering; Semiconductor devices;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.1985.4334129
Filename :
4334129
Link To Document :
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