Title :
Current and Voltage gain in a monolithic GaAs/AlGaAs TTJ at room temperature
Author :
Müller, C.R. ; Worschech, L. ; Spanheimer, D. ; Forchel, A.
Author_Institution :
Tech. Phys., Univ. Wurzburg, Germany
fDate :
4/1/2006 12:00:00 AM
Abstract :
Transistor characteristics of monolithic GaAs/AlGaAs three-terminal junctions are studied at room temperature. It is found that the channel is controlled by the center branch, although considerable leakage currents flow into the junction. Large current gain, up to 60, is observed. Furthermore, a maximum differential-voltage gain up to values of -30 is demonstrated. The frequency dependence of the rectified output provides a cutoff frequency of 4 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; gallium compounds; leakage currents; semiconductor heterojunctions; 4 GHz; GaAs-AlGaAs; current gain; differential-voltage gain; frequency dependence; leakage currents; monolithic three-terminal junctions; transistor characteristics; Contacts; Cutoff frequency; Epitaxial layers; Frequency dependence; Gallium arsenide; Leakage current; Scanning electron microscopy; Stability; Temperature; Voltage; Gain; leakage current; room temperature; threeterminal junction; transistor characteristics;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.870415
