Title :
A new metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor (MFIS) FET for nonvolatile memory applications
Author :
Juan, Trevor Pi-Chun ; Chang, Chung-Yuan ; Lee, Joseph Ya-min
fDate :
4/1/2006 12:00:00 AM
Abstract :
Metal-ferroelectric-insulator-semiconductor (MFIS) field-effect transistors with Pb(Zr0.53,Ti0.47)O3 ferroelectric layer and dysprosium oxide Dy2O3 insulator layer were fabricated. The out-diffusion of atoms between Dy2O3 and silicon was examined by secondary ion mass spectrometry profiles. The size of the memory windows was investigated. The memory windows measured from capacitance-voltage curves of MFIS capacitors and IDS-VGS curves of MFIS transistors are consistent. The nonvolatile operation of MFIS transistors was demonstrated by applying positive/negative writing pulses. A high driving current of 9 μA/μm was obtained even for long-channel devices with a channel length of 20 μm. The electron mobility is 181 cm2/V·s. The retention properties of MFIS transistors were also measured.
Keywords :
MFIS structures; dysprosium compounds; electron mobility; elemental semiconductors; field effect transistors; lead compounds; random-access storage; secondary ion mass spectra; semiconductor storage; silicon; titanium compounds; zirconium compounds; 20 micron; Dy2O3; MFIS FET devices; MFIS capacitors; MFIS transistors; PbZr0.53Ti0.47O3; Si; capacitance-voltage curves; data retention; electron mobility; ferroelectric layer; field-effect transistors; insulator layer; long-channel devices; memory windows; metal-ferroelectric-insulator-semiconductor transistor; nonvolatile memory; retention properties; secondary ion mass spectrometry; Atomic layer deposition; Atomic measurements; Capacitance measurement; Capacitance-voltage characteristics; FETs; Ferroelectric materials; Insulation; Mass spectroscopy; Metal-insulator structures; Silicon; Data retention; high-; memory window; metal–ferroelectric–insulator–semiconductor (MFIS) transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.870414
