DocumentCode :
881885
Title :
Uniformly beam expanded 1.3 μm laser diodes with thin separate confinement heterostructure layers for high coupling efficiency and good temperature characteristic
Author :
Fukano, H. ; Yokoyama, K. ; Kadota, Y. ; Kondo, Y. ; Ueki, M. ; Yoshida, J.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume :
32
Issue :
9
fYear :
1996
fDate :
4/25/1996 12:00:00 AM
Firstpage :
819
Lastpage :
821
Abstract :
Low-loss-fibre-coupling 1.3 μm laser diodes with excellent temperature characteristics were fabricated by employing thin (20 nm) separate confinement heterostructure layers. Fabricated LDs with an active layer with of 1.5 μm show single-mode-fibre coupling loss of 2.6 dB, threshold current Ith of 16.4 (51.0) mA and high efficiency of 0.5 (0.3) W/A at 25 (85)°C, respectively
Keywords :
laser transitions; optical communication equipment; optical fibre losses; quantum well lasers; 1.3 micron; 16.4 to 51 mA; 2.6 dB; 25 to 85 C; MQW lasers; SCH layer; high coupling efficiency; laser diodes; low-loss-fibre-coupling laser; semiconductor lasers; separate confinement heterostructure layers; single-mode-fibre coupling loss; temperature characteristic; threshold current; uniformly beam expanded LD;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19960531
Filename :
492942
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=881885
بازگشت