DocumentCode :
881895
Title :
Nonlinear Biasing Resistors for Microwave Tunnel-Diode Oscillators (Correspondence)
Author :
Wallmark, J.T. ; Dansky, A.H.
Volume :
11
Issue :
4
fYear :
1963
fDate :
7/1/1963 12:00:00 AM
Firstpage :
260
Lastpage :
262
Abstract :
By using a nonlinear rather than a linear stabilizing resistor in tunnel-diode oscillator and amplifier circuits, the dc power dissipation in the resistor may be reduced by a factor of 3 for typical germanium tunnel diodes, and by a factor of 6 for typical gallium arsenide tunnel diodes. At the same time ac loading by the resistor is reduced. Such nonlinear stabilizing resistors may consist of reverse- or forward-biased heavily doped pn junctions.
Keywords :
Current-voltage characteristics; Gallium arsenide; Germanium; Microwave amplifiers; Microwave circuits; Microwave oscillators; Power dissipation; Resistors; Semiconductor diodes; Tunneling;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.1963.1125654
Filename :
1125654
Link To Document :
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