Title :
Nonlinear Biasing Resistors for Microwave Tunnel-Diode Oscillators (Correspondence)
Author :
Wallmark, J.T. ; Dansky, A.H.
fDate :
7/1/1963 12:00:00 AM
Abstract :
By using a nonlinear rather than a linear stabilizing resistor in tunnel-diode oscillator and amplifier circuits, the dc power dissipation in the resistor may be reduced by a factor of 3 for typical germanium tunnel diodes, and by a factor of 6 for typical gallium arsenide tunnel diodes. At the same time ac loading by the resistor is reduced. Such nonlinear stabilizing resistors may consist of reverse- or forward-biased heavily doped pn junctions.
Keywords :
Current-voltage characteristics; Gallium arsenide; Germanium; Microwave amplifiers; Microwave circuits; Microwave oscillators; Power dissipation; Resistors; Semiconductor diodes; Tunneling;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.1963.1125654