Title :
Transverse electric fields in n-GaAs
Author :
Aubrey, J.E. ; Yick, G.P. ; Westwood, D.I.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Wales Coll. of Cardiff, UK
Abstract :
Longitudinal electric fields >or=0.5 kV/cm applied to a thin off-axis n-GaAs sample give rise to transverse electric fields across the thin sample dimension. This arises from the anisotropic transport properties of L point electrons, and may provide a means of determining intervalley scattering times and other transport related parameters for GaAs.
Keywords :
III-V semiconductors; electric fields; electrical conductivity of crystalline semiconductors and insulators; gallium arsenide; high field effects; many-valley semiconductors; GaAs; L point electrons; anisotropic transport properties; applied longitudinal fields; intervalley scattering times; n-type semiconductor; offaxis sample; transverse electric fields;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19920271
