Optimal second-order small-signal model for long- and short-channel three-terminal MOSFET/MODFET wave equation

Author

Kang, Sung Choon ; Roblin, Patrick

Volume

39

Issue

8

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

1909

Lastpage

1915

Abstract

An optimal second-order small-signal model is developed for the long-channel three-terminal MOSFET/MODFET wave equation. The resulting Y parameters admit the correct fourth-order frequency power series expansion and exhibit a graceful degradation at high frequencies compared to a previously reported second-order model. This model can be integrated in the velocity-saturated MOSFET/MODFET equivalent circuit and is demonstrated to greatly improve the frequency range of validity of this short-channel model. The excellent results obtained demonstrate the validity of both the equivalent-circuit synthesis procedure and the correctness of the equivalent circuit proposed

Keywords

equivalent circuits; high electron mobility transistors; insulated gate field effect transistors; semiconductor device models; wave equations; equivalent-circuit synthesis procedure; fourth-order frequency power series expansion; long-channel three-terminal MOSFET/MODFET wave equation; optimal second-order small-signal model; short-channel model; velocity-saturated MOSFET/MODFET equivalent circuit; Degradation; Equivalent circuits; FETs; Frequency; HEMTs; Iterative methods; MODFETs; MOSFET circuits; Partial differential equations; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.144683

Filename

144683