Title :
Optimal second-order small-signal model for long- and short-channel three-terminal MOSFET/MODFET wave equation
Author :
Kang, Sung Choon ; Roblin, Patrick
fDate :
8/1/1992 12:00:00 AM
Abstract :
An optimal second-order small-signal model is developed for the long-channel three-terminal MOSFET/MODFET wave equation. The resulting Y parameters admit the correct fourth-order frequency power series expansion and exhibit a graceful degradation at high frequencies compared to a previously reported second-order model. This model can be integrated in the velocity-saturated MOSFET/MODFET equivalent circuit and is demonstrated to greatly improve the frequency range of validity of this short-channel model. The excellent results obtained demonstrate the validity of both the equivalent-circuit synthesis procedure and the correctness of the equivalent circuit proposed
Keywords :
equivalent circuits; high electron mobility transistors; insulated gate field effect transistors; semiconductor device models; wave equations; equivalent-circuit synthesis procedure; fourth-order frequency power series expansion; long-channel three-terminal MOSFET/MODFET wave equation; optimal second-order small-signal model; short-channel model; velocity-saturated MOSFET/MODFET equivalent circuit; Degradation; Equivalent circuits; FETs; Frequency; HEMTs; Iterative methods; MODFETs; MOSFET circuits; Partial differential equations; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
