DocumentCode :
881965
Title :
10 Gb/s silicon bipolar 8:1 multiplexer and 1:8 demultiplexer
Author :
Stout, Cheryl L. ; Doernberg, Joey
Author_Institution :
Hewlett-Packard Lab., Palo Alto, CA, USA
Volume :
28
Issue :
3
fYear :
1993
fDate :
3/1/1993 12:00:00 AM
Firstpage :
339
Lastpage :
343
Abstract :
High-speed multiplexer and demultiplexer circuits are key components in high-speed optical communication systems such as SONET. As optical communication link speeds increase, faster electronic interface circuitry is required. The use of multiplexer circuits allows most of the electronic circuitry to operate on parallel data at a lower speed, reducing the speed requirements of much of the system. A retimed 8:1 multiplexer and a 1:8 demultiplexer which operate at 10 Gb/s are described. These circuits were fabricated in high-speed silicon bipolar process. Design optimization techniques were used to achieve maximum performance. The retimed multiplexer and the demultiplexer dissipate 3.8 and 4.3 W, respectively
Keywords :
SONET; bipolar integrated circuits; data communication equipment; demultiplexing equipment; digital communication systems; digital integrated circuits; elemental semiconductors; multiplexing equipment; optical communication equipment; silicon; time division multiplexing; 10 Gbit/s; 3.8 W; 4.3 W; SONET; TDM; demultiplexer; high speed Si bipolar process; high-speed optical communication systems; multiplexer; Bit rate; Circuits; Clocks; Design optimization; Flip-flops; Jitter; Multiplexing; Optical fiber communication; SONET; Silicon;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.210001
Filename :
210001
Link To Document :
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