Title :
High-speed programmable logic arrays in ESFI SOS technology
Author :
Hebenstreit, Ernst ; Horninger, Karlheinrich
fDate :
6/1/1976 12:00:00 AM
Abstract :
Exploratory MOS programmable logic array (PLA´s) operating up to a clock frequency of 22 MHz have been realized and successfully operated. These PLA´s used dynamic logic gates and are built in epitaxial-silicon films on insulators (ESFI) silicon-on-sapphire (SOS) technology. The problems arising with the use of these dynamic gates in a two-stage logic array are discussed and different circuits are presented. The advantage of these circuits, in addition to their high speeds, is reduced power consumption, and the possibility to determine the number of feedback loops when the array is personalized. The features of the circuits are compared with each other with a complete PLA described in an earlier paper (see ibid., vol. SC-10, p.331 (1975)). The results gained from computer simulations agree reasonably well with the experimental results.
Keywords :
Digital integrated circuits; Field effect transistors; Large scale integration; Logic circuits; Monolithic integrated circuits; digital integrated circuits; field effect transistors; large scale integration; logic circuits; monolithic integrated circuits; Clocks; Feedback circuits; Frequency; Insulation; Logic arrays; Logic circuits; Logic gates; Programmable logic arrays; Semiconductor films; Silicon on insulator technology;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1976.1050738
