Flexible AM OLED panel driven by bottom-contact OTFTs

Author

Mizukami, M. ; Hirohata, N. ; Iseki, T. ; Ohtawara, K. ; Tada, T. ; Yagyu, S. ; Abe, T. ; Suzuki, T. ; Fujisaki, Y. ; Inoue, Y. ; Tokito, S. ; Kurita, T.

Author_Institution

Victor Co. of Japan, Kanagawa, Japan

Volume

27

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

249

Lastpage

251

Abstract

Active matrix organic-light-emitting-diode (AM OLED) panels, driven by organic thin-film transistors (OTFT), have been successfully fabricated on a flexible plastic substrate. The pixel circuit consists of two bottom-contact pentacene OTFTs working as switching and driving transistors. The panel has 16 × 16 pixels, each of which have an OLED using a phosphorescent material with an emission efficiency of 30 cd/A. A tantalum oxide (Ta₂O₅) film with a dielectric constant of 24, prepared by the anodization of Tantalum (Ta), was used as the gate insulator of the OTFTs. The passivation layer on the OTFTs was formed by a layer of silicon dioxide (SiO₂) and two layers of polyvinyl alcohol. Using OTFTs with a Ta₂O₅ gate insulator, the authors have realized a flexible active matrix OLED panel driven with a low voltage of -12 V.

Keywords

anodisation; flexible electronics; organic light emitting diodes; passivation; permittivity; phosphorescence; plastics; silicon compounds; tantalum compounds; thin film transistors; SiO₂; Ta₂O₅; active matrix organic-light-emitting-diode; anodization process; bottom-contact pentacene OTFT; dielectric constant; flexible AM OLED; flexible plastic substrate; gate insulators; organic thin-film transistors; passivation layers; phosphorescent material; pixel circuits; polyvinyl alcohol; tantalum oxide film; Active matrix organic light emitting diodes; Dielectric materials; Organic light emitting diodes; Organic thin film transistors; Pentacene; Phosphorescence; Plastics; Substrates; Switching circuits; Thin film transistors; Flexible; organic light emitting diode (OLED); organic thin-film transistor (OTFT); plastic;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.870413

Filename

1610776