Electroluminescence from the Ge quantum dot MOS tunneling diodes

Author

Liao, M.H. ; Yu, C.-Y. ; Guo, T.-H. ; Lin, Chia-Hung ; Liu, C.W.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

27

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

252

Lastpage

254

Abstract

A Ge quantum dot (QD) light-emitting diode (LED) is demonstrated using a MOS tunneling structure for the first time. The oxide film was grown by liquid phase deposition at 50/spl deg/C to reduce the thermal budget. The infrared emission of /spl sim/1.5 μm was observed from Ge QD MOS LEDs, similar to the p-type-intrinsic-n-type structure reported previously. At the negative gate bias, the electrons in the Al gate electrode tunnel to the Ge QD through the ultrathin oxide and recombine radiatively with holes to emit the /spl sim/1.5μm infrared. The electrons also recombine with holes in the Si cap, and the band edge emission from Si is also observed.

Keywords

MIS devices; aluminium; electroluminescence; elemental semiconductors; germanium; light emitting diodes; liquid phase deposited coatings; semiconductor quantum dots; silicon; tunnel diodes; 50 C; Al; Ge; MOS tunneling diodes; MOS tunneling structure; Si; band edge emission; electroluminescence; gate electrodes; infrared emission; liquid phase deposition; negative gate bias; oxide films; quantum dot light-emitting diode; Charge carrier processes; Electroluminescence; Electron emission; Infrared detectors; Light emitting diodes; P-i-n diodes; Quantum dots; Tunneling; US Department of Transportation; Ultra large scale integration; Ge quantum dot (QD) light-emitting diodes (LEDs); MOS tunneling diode;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.870416

Filename

1610777