Title :
A GaAs four-quadrant analog multiplier circuit
Author_Institution :
Dept. of Electr. Eng., Wright State Univ., Dayton, OH, USA
fDate :
3/1/1993 12:00:00 AM
Abstract :
A design for a four-quadrant analog multiplier is presented using GaAs MESFETs. The fabricated circuit has a -3 dB bandwidth of 410 MHz with 50-Ω/6.5-pF output loading, nonlinearity of less than 1%, and static power dissipation of 86.1 mW with Vdd=3 V and Vss=-2 V. Simulations indicate the circuit will operate at frequencies over 2.0 GHz with on-chip loads of 0.15 pF
Keywords :
III-V semiconductors; Schottky gate field effect transistors; analogue computer circuits; field effect integrated circuits; gallium arsenide; multiplying circuits; 2 GHz; 410 MHz; 86.1 mW; GaAs; MESFETs; four-quadrant analog multiplier; Bandwidth; Frequency; Gallium arsenide; MESFET circuits; MOSFETs; Resistors; Semiconductor process modeling; Solid state circuit design; Summing circuits; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
