DocumentCode :
88205
Title :
A 90-nm CMOS 5-Mbps Crystal-Less RF-Powered Transceiver for Wireless Sensor Network Nodes
Author :
Papotto, Giuseppe ; Carrara, Francesco ; Finocchiaro, Alessandro ; Palmisano, G.
Author_Institution :
STMicroelectron. s.r.l., Biancavilla, Italy
Volume :
49
Issue :
2
fYear :
2014
fDate :
Feb. 2014
Firstpage :
335
Lastpage :
346
Abstract :
This paper presents a 90-nm CMOS batteryless transceiver for RF-powered wireless sensor networks. The circuit is made up of a RF energy harvesting module that is implemented through a multi-stage rectifier, a power management unit, and a PLL-based RF front-end that enables TX carrier synthesis by exploiting the RF input signal as a reference frequency. This avoids the use of a local crystal oscillator, thus implementing a highly integrated low-cost wireless transceiver. An active narrowband transmission scheme is adopted with the aim of overcoming the reader self-jamming that limits the operating range of backscattering-based RF-powered devices. The circuit supports a 915-MHz FSK downlink and a 2.45-GHz OOK uplink, while achieving a data rate up to 5 Mbps. It operates with an RF input power as low as -17.1 dBm.
Keywords :
CMOS integrated circuits; amplitude shift keying; energy harvesting; frequency shift keying; jamming; radio transceivers; rectifiers; wireless sensor networks; CMOS batteryless transceiver; CMOS crystal-less RF-powered transceiver; FSK downlink; OOK uplink; PLL-based RF front-end; RF energy harvesting module; TX carrier synthesis; active narrowband transmission; bit rate 5 Mbit/s; frequency 2.45 GHz; frequency 915 MHz; local crystal oscillator; multistage rectifier; power management unit; self-jamming; size 90 nm; wireless sensor network nodes; wireless transceiver; Frequency shift keying; Radio frequency; Threshold voltage; Transceivers; Transistors; Voltage control; Wireless sensor networks; 90-nm CMOS; Batteryless; RF transceiver; RF-powered sensor network; crystal-less; energy harvesting; radio frequency identification (RFID);
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2013.2285371
Filename :
6658911
Link To Document :
بازگشت