Metal-replaced junction for reducing the junction parasitic resistance of a TFT

Author

Zhang, Dongli ; Wong, Man

Author_Institution

Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China

Volume

27

Issue

4

fYear

2006

fDate

4/1/2006 12:00:00 AM

Firstpage

269

Lastpage

271

Abstract

Thin-film transistors (TFTs) with metal-replaced junctions (MERJs) have been fabricated and characterized. The junction parasitic resistance of a MERJ TFT is significantly reduced by partially replacing the semiconductor source and drain with a metal. The replacement process was executed at a low temperature of 400°C with minimum added process complexity. Compared to a TFT with regular semiconductor source and drain junctions, a MERJ TFT was found to exhibit higher effective values of field-effect mobility and ON-state current.

Keywords

aluminium; carrier mobility; semiconductor junctions; thin film transistors; 400 C; Al; field-effect mobility; junction parasitic resistance; metal-replaced junctions; on-state current; semiconductor drain junction; semiconductor source junction; thin-film transistors; Aluminum; Dielectric substrates; Electrodes; Fabrication; Leakage current; Nitrogen; Performance gain; Silicon; Temperature; Thin film transistors; Aluminum (Al); metal-replaced junction (MERJ); parasitic resistance; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.871180

Filename

1610782