Title :
Metal-replaced junction for reducing the junction parasitic resistance of a TFT
Author :
Zhang, Dongli ; Wong, Man
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ. of Sci. & Technol., Kowloon, China
fDate :
4/1/2006 12:00:00 AM
Abstract :
Thin-film transistors (TFTs) with metal-replaced junctions (MERJs) have been fabricated and characterized. The junction parasitic resistance of a MERJ TFT is significantly reduced by partially replacing the semiconductor source and drain with a metal. The replacement process was executed at a low temperature of 400°C with minimum added process complexity. Compared to a TFT with regular semiconductor source and drain junctions, a MERJ TFT was found to exhibit higher effective values of field-effect mobility and ON-state current.
Keywords :
aluminium; carrier mobility; semiconductor junctions; thin film transistors; 400 C; Al; field-effect mobility; junction parasitic resistance; metal-replaced junctions; on-state current; semiconductor drain junction; semiconductor source junction; thin-film transistors; Aluminum; Dielectric substrates; Electrodes; Fabrication; Leakage current; Nitrogen; Performance gain; Silicon; Temperature; Thin film transistors; Aluminum (Al); metal-replaced junction (MERJ); parasitic resistance; thin-film transistor (TFT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.871180
