Title :
Low-voltage ULSI design
Author :
Shimohigashi, Katsuhiro ; Seki, Koichi
Author_Institution :
Hitachi Ltd., Tokyo, Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
An overall view on low-voltage device and circuit design is presented, beginning with a discussion of the low-voltage limit. Low-voltage device design is then described. Low-voltage CMOS and BiCMOS logic circuits are discussed. Circuit techniques for the low-voltage DRAMs and SRAMs are presented. The low-voltage analog devices and circuits are considered. The future direction of the low-voltage and low-power ULSIs is discussed by comparing the switching energy of electronic devices and brain cells
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; DRAM chips; SRAM chips; VLSI; integrated logic circuits; linear integrated circuits; BiCMOS; CMOS; DRAMs; LV design; SRAMs; ULSI design; analog devices; circuit design; digital ICs; logic circuits; low-power; low-voltage device; low-voltage limit; memory chips; Breakdown voltage; Circuit synthesis; Data processing; Hot carriers; Inverters; Logic circuits; Solid state circuit design; Temperature; Threshold voltage; Ultra large scale integration;
Journal_Title :
Solid-State Circuits, IEEE Journal of
