DocumentCode
882084
Title
Low-voltage ULSI design
Author
Shimohigashi, Katsuhiro ; Seki, Koichi
Author_Institution
Hitachi Ltd., Tokyo, Japan
Volume
28
Issue
4
fYear
1993
fDate
4/1/1993 12:00:00 AM
Firstpage
408
Lastpage
413
Abstract
An overall view on low-voltage device and circuit design is presented, beginning with a discussion of the low-voltage limit. Low-voltage device design is then described. Low-voltage CMOS and BiCMOS logic circuits are discussed. Circuit techniques for the low-voltage DRAMs and SRAMs are presented. The low-voltage analog devices and circuits are considered. The future direction of the low-voltage and low-power ULSIs is discussed by comparing the switching energy of electronic devices and brain cells
Keywords
BiCMOS integrated circuits; CMOS integrated circuits; DRAM chips; SRAM chips; VLSI; integrated logic circuits; linear integrated circuits; BiCMOS; CMOS; DRAMs; LV design; SRAMs; ULSI design; analog devices; circuit design; digital ICs; logic circuits; low-power; low-voltage device; low-voltage limit; memory chips; Breakdown voltage; Circuit synthesis; Data processing; Hot carriers; Inverters; Logic circuits; Solid state circuit design; Temperature; Threshold voltage; Ultra large scale integration;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/4.210022
Filename
210022
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