Title :
Fully self-aligned Si bipolar transistor with collector and base grown using silane-only selective epitaxy
Author :
Gregory, H.J. ; Bonar, J.M ; Ashburn, P. ; Parker, G.J.
Author_Institution :
Dept. of Electron. & Comput. Sci., Southampton Univ., UK
fDate :
4/25/1996 12:00:00 AM
Abstract :
A fully self-aligned bipolar process is described, in which the collector and base are grown using silane-only selective epitaxy. Ideality factors of 1.004 and 1.15 are obtained for the collector and base characteristics. These promising results demonstrate the suitability of silane-only selective epitaxy for high-speed bipolar applications
Keywords :
bipolar transistors; chemical beam epitaxial growth; elemental semiconductors; organic compounds; semiconductor device manufacture; semiconductor growth; silicon; Si; Si bipolar transistor; base characteristics; collector characteristics; high-speed bipolar transistor; ideality factors; self-aligned bipolar process; silane-only selective epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960570
