Title :
A model for charge transport in surface channel devices
Author :
Scott, D.B. ; Chamberlain, S.G.
fDate :
6/1/1976 12:00:00 AM
Abstract :
A distributed capacitor model is proposed to simulate charge transport in surface inversion layers. Theoretical results of this model agreed well with experimental results obtained on the input section of a charge-coupled device (CCD).
Keywords :
Charge-coupled devices; Semiconductor device models; charge-coupled devices; semiconductor device models; Capacitance; Capacitors; Charge coupled devices; Circuits; Equations; Microscopy; Potential well; Resistors; TV; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1976.1050750
