Title : 
High-frequency response in carbon nanotube field-effect transistors
         
        
            Author : 
Frank, David J. ; Appenzeller, Joerg
         
        
            Author_Institution : 
IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
         
        
        
        
        
        
        
            Abstract : 
We report electrical measurements of the radio frequency response of carbon nanotube field-effect transistors (CNFETs). The very low current drive of CNFETs makes conventional high-frequency measurements difficult. To overcome this problem, we have used a novel approach to easily measure the response up to 250 MHz in nonoptimized experimental conditions. We observe a clear response of our CNFETs with no deterioration in signal up to at least 250 MHz, which is the limit for our present configuration.
         
        
            Keywords : 
carbon nanotubes; insulated gate field effect transistors; nanotechnology; 250 MHz; C; carbon nanotube; electrical measurements; field-effect transistors; high-frequency measurements; high-frequency response; radio frequency response; signal deterioration; very low current drive; CNTFETs; Carbon nanotubes; Current measurement; Dielectric substrates; Electric variables measurement; FETs; Frequency measurement; Frequency response; Radio frequency; Voltage;
         
        
        
            Journal_Title : 
Electron Device Letters, IEEE
         
        
        
        
        
            DOI : 
10.1109/LED.2003.821589