Title :
Effect of tensile uniaxial stress on the electron transport properties of deeply scaled FD-SOI n-type MOSFETs
Author :
Nayfeh, H.M. ; Singh, D.V. ; Hergenrother, J.M. ; Sleight, J.W. ; Ren, Zhang ; Dokumaci, O. ; Black, L. ; Chidambarrao, D. ; Venigalla, R. ; Pan, Jeng-Shyang ; Natzle, W. ; Tessier, B.L. ; Ott, J.A. ; Khare, Manish ; Guarini, K.W. ; Ieong, M. ; Haensch, W
Author_Institution :
Technol. Group, IBM Syst., Hopewell Junction, NY, USA
fDate :
4/1/2006 12:00:00 AM
Abstract :
The effect of longitudinal uniaxial mechanical stress on electron mobility in high-performance fully depleted ultrathin silicon-on-insulator nFETs with a raised source/drain (RSD) architecture and channel lengths ranging from 1 μm (long channel) to 30 nm (deeply scaled) is reported. Longitudinal uniaxial stress in the channel was achieved using a stressed nitride contact liner technique. A dR/dL method was used to minimize errors in the mobility extraction due to uncertainties in external resistance and channel length. Significant mobility enhancement of 1.6-1.8 times was achieved despite the use of an RSD and strong channel doping of roughly 5×10/sup 18/ cm/sup -3/, required for short-channel effect control.
Keywords :
MOSFET; electron mobility; semiconductor device reliability; semiconductor doping; silicon-on-insulator; stress effects; CMOS technology; FD-SOI n-type MOSFET; channel doping; channel lengths; electron mobility enhancement; electron transport properties; external resistance; fully depleted silicon-on-insulator; nitride contact liner technique; raised source-drain architecture; short-channel effect control; tensile uniaxial stress effect; ultrathin silicon-on-insulator nFET; uniaxial mechanical stress effect; CMOS technology; Doping; Electron mobility; Implants; MOSFETs; Mechanical factors; Research and development; Silicon on insulator technology; Tensile stress; Uncertainty; Deeply scaled CMOS; MOSFET; fully depleted silicon-on-insulator (FD-SOI); strained-Si; stress; ultrathin silicon-on-insulator SOI (UTSOI); uniaxial stress;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.871542
