DocumentCode :
882167
Title :
Gettering of impurities from gallium arsenide
Author :
Dastidar, P.R.
Volume :
5
Issue :
22
fYear :
1969
Firstpage :
553
Lastpage :
554
Abstract :
Impurities have been gettered from gallium arsenide using a glass surface layer. Mobility has been found to increase by a factor of two to three. Injection-laser threshold current density at 77K reduced from 750Acm¿2 to 425Acm¿2.
Keywords :
semiconductor defects; semiconductor materials;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19690416
Filename :
4210636
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=882167
