DocumentCode
882194
Title
Low-subthreshold-swing tunnel transistors
Author
Zhang, Qin ; Zhao, Wei ; Seabaugh, Alan
Author_Institution
Dept. of Electr. Eng., Univ. of Notre Dame, IN, USA
Volume
27
Issue
4
fYear
2006
fDate
4/1/2006 12:00:00 AM
Firstpage
297
Lastpage
300
Abstract
A formula is derived, which shows that the subthreshold swing of field-effect interband tunnel transistors is not limited to 60 mV/dec as in the MOSFET. This formula is consistent with two recent reports of interband tunnel transistors, which show lower than 60-mV/dec subthreshold swings and provides two simple design principles for configuring these transistors. One of these principles suggests placing the gate adjacent to the tunnel junction. Modeling of this configuration verifies that sub-60-mV/dec swing is possible.
Keywords
MOSFET; semiconductor device models; semiconductor junctions; silicon-on-insulator; tunnel transistors; MOSFET devices; field-effect interband tunnel transistors; silicon-on-insulator; subthreshold swing; tunnel junction; Current measurement; Electrons; FETs; MOSFET circuits; PIN photodiodes; Power dissipation; Power supplies; Temperature; Tunneling; Voltage; Silicon-on-insulator (SOI); subthreshold swing; tunnel transistor;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2006.871855
Filename
1610791
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