Title :
Low-power 1/2 frequency dividers using 0.1-μm CMOS circuits built with ultrathin SIMOX substrates
Author :
Fujishima, M. ; Asada, K. ; Omura, Y. ; Izumi, K.
Author_Institution :
Dept. of Electron. Eng., Tokyo Univ., Japan
fDate :
4/1/1993 12:00:00 AM
Abstract :
Four types of frequency dividers were fabricated on SIMOX/SOI (separation by implanted oxygen/silicon on insulator) substrates. A novel circuit among these four circuits showed the highest operation frequency of 1.2 GHz under 1-V supply voltage, with gate lengths of 0.15 and 0.1 μm. Power consumption was no more than 50 and 62 μW for both 0.15- and 0.1-μm gate designs, respectively
Keywords :
CMOS integrated circuits; NAND circuits; SIMOX; frequency dividers; integrated logic circuits; 0.1 micron; 0.15 micron; 1 V; 1.2 GHz; 50 muW; 62 muW; CMOS circuits; SOI; frequency dividers; low power type; master-slave circuit; ultrathin SIMOX substrates; CMOS technology; Energy consumption; Frequency conversion; Inverters; MOSFET circuits; Master-slave; Oxygen; Silicon on insulator technology; Substrates; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
