Title :
A Ternary Memory Element Using a Tunnel Diode
Author_Institution :
Applied Mathematics Div., Argonne National Lab., Argonne, Ill.
fDate :
4/1/1964 12:00:00 AM
Keywords :
Arithmetic; Bismuth; Capacitors; Circuits; Current-voltage characteristics; Diodes; Inductance; Mathematics; Variable speed drives; Voltage;
Journal_Title :
Electronic Computers, IEEE Transactions on
DOI :
10.1109/PGEC.1964.263789
