Title :
High-performance transistors with arsenic-implanted polysil emitters
Author :
Graul, Jürgen ; Glasl, Andreas ; Murrmann, Helmuth
fDate :
8/1/1976 12:00:00 AM
Abstract :
Integrated high-frequency transistors (f/SUB T/>3 GHz) with an arsenic implanted polysil emitter have been investigated. The results are compared with data of bipolar transistors made with the conventional planar technique. It is shown that better emitter efficiency higher current carrying capability, and improved emitter-base breakdown can be achieved for transistors with polysil emitters.
Keywords :
Bipolar transistors; Ion implantation; Semiconductor device manufacture; Semiconductor doping; bipolar transistors; ion implantation; semiconductor device manufacture; semiconductor doping; Bipolar transistors; Electric breakdown; Geometry; Ion implantation; Logic; Performance gain; Radiative recombination; Reproducibility of results; Semiconductor device doping; Silicon;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1976.1050764
