Title :
A new bipolar process-borsenic
Author :
Saraswat, Krishna C. ; Meindl, James D.
Abstract :
A novel bipolar process, with arsenic emitters, has been developed. The base and the emitter are simultaneously diffused from an oxide source containing B/SUB 2/O/SUB 3/ and As/SUB 2/O/SUB 3/. Because of the slow diffusion of B in the presence of As, extremely shallow junctions have been obtained. n-p-n transistors with high h/SUB FE/, high breakdown, high f/SUB T/, and very little low current h/SUB FE/ falloff have been fabricated. Lateral p-n-p and p-channel JFET´s have also been fabricated on the same chip without any extra processing step.
Keywords :
Bipolar transistors; Semiconductor device manufacture; bipolar transistors; semiconductor device manufacture; Ash; Boron; Electric breakdown; Fabrication; Frequency; Inductors; Integrated circuit technology; Oxidation; Temperature; Voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1976.1050765
