Title :
A polarization independent GaAs-AlGaAs electrooptic modulator
Author :
Spickermann, Ralph ; Peters, Matthew G. ; Dagli, Nadir
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
5/1/1996 12:00:00 AM
Abstract :
Two designs for polarization independent GaAs-AlGaAs interferometric electrooptic modulators are described. One design uses the linear electrooptic effect to couple degenerate TE/TM eigenmodes of a single-mode waveguide. In the other design the eigenmodes need only be near degenerate. The design using the coupling between near degenerate TE/TM modes utilizes a novel biasing scheme. A novel polarization independent GaAs-AlGaAs interferometric optical modulator based on this design has been fabricated and characterized at 1.3 μm. This modulator is fabricated as a traveling wave modulator incorporating 50 Ω, phase velocity matched, low microwave loss electrodes for maximum electrical bandwidth
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; coupled mode analysis; electro-optical modulation; gallium arsenide; optical couplers; optical fabrication; optical waveguides; rib waveguides; semiconductor heterojunctions; 1.3 mum; GaAs-AlGaAs; biasing scheme; characterization; degenerate TE/TM eigenmodes; design; eigenmodes; electrooptic modulator; fabrication; interferometric electrooptic modulators; linear electrooptic effect; low microwave loss electrodes; maximum electrical bandwidth; near degenerate eigenmodes; phase velocity matched electrodes; polarization independent electrooptic modulator; single-mode waveguide; traveling wave modulator; Electrooptic effects; Electrooptic modulators; Electrooptical waveguides; Optical design; Optical interferometry; Optical modulation; Optical polarization; Optical waveguides; Phase modulation; Tellurium;
Journal_Title :
Quantum Electronics, IEEE Journal of
