Title :
A traveling fringes photodetector for microwave signals
Author :
Merlet, Thomas ; Dolfi, Daniel ; Huignard, Jean-Pierre
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
fDate :
5/1/1996 12:00:00 AM
Abstract :
We report a novel straightforward theoretical analysis and improved high frequency experimental performances of a new type resonant photodetector. A large detection volume is provided by a synchronous drift of photogenerated carriers with a moving interference pattern in a photoconductor. It appears to be suitable for optical generation of microwave signals at high power levels. Performances as a function of applied electric field, photoconductive material characteristic, fringe period, and optical power level are analyzed. Experimental results using a GaAs photoconductive layer are presented at frequency f=1.6 GHz
Keywords :
III-V semiconductors; gallium arsenide; integrated optics; microwave generation; optical information processing; photoconducting devices; photodetectors; 1.6 GHz; GaAs; GaAs photoconductive layer; applied electric field; fringe period; high frequency experimental performances; high power levels; large detection volume; microwave signal processing; moving interference pattern; optical microwave signal generation; optical power level; photoconductive material characteristic; photoconductor; photogenerated carriers; resonant photodetector; synchronous drift; theoretical analysis; traveling fringes photodetector; Frequency; High power microwave generation; Interference; Microwave generation; Performance analysis; Photoconducting materials; Photoconductivity; Photodetectors; Power generation; Resonance;
Journal_Title :
Quantum Electronics, IEEE Journal of
