Title :
Spontaneous emission induced filamentation in flared amplifiers
Author :
Ramanujan, Sujatha ; Winful, Herbert G.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
5/1/1996 12:00:00 AM
Abstract :
We present a propagation model for the steady-state properties of InGaAs QW flared laser amplifiers. Included in this analysis are diffusion, diffraction, carrier induced antiguiding, current spreading, gain spatial hole burning, gain compression and spontaneous emission. By monitoring the progress of the field, as well as the carrier density, we show that spontaneous emission, coupled with gain spatial hole burning, can result in filamentation of the amplifier output. This mechanism is in addition to other phenomena such as thermal effects and reflective feedback which have been shown to cause filamentation
Keywords :
III-V semiconductors; carrier density; filamentation instability; gallium arsenide; indium compounds; laser feedback; laser stability; laser theory; optical hole burning; quantum well lasers; semiconductor device models; spontaneous emission; waveguide lasers; InGaAs; InGaAs QW flared laser amplifiers; carrier density; carrier induced antiguiding; current spreading; diffraction; diffusion; flared amplifiers; gain compression; gain spatial hole burning; monitoring; propagation model; reflective feedback; spontaneous emission induced filamentation; steady-state properties; thermal effects; Laser feedback; Laser modes; Laser stability; Optical amplifiers; Optical beams; Power lasers; Pulse amplifiers; Semiconductor laser arrays; Spontaneous emission; Surface emitting lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
