Photovoltaic properties of 0.95-eV p-n InGaAsP homojunction solar cells prepared by liquid-phase epitaxy

Author

Shen, C.C. ; Chang, Pan-Tze ; Choi, Kwan-Yiu

Author_Institution

Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA

Volume

37

Issue

2

fYear

1990

fDate

2/1/1990 12:00:00 AM

Firstpage

464

Lastpage

468

Abstract

High-performance 0.95-eV p-n InGaAsP homojunction solar cells fabricated by liquid-phase epitaxy (LPE) are discussed. The best conversion efficiency obtained from cells with overlying InP filters under one-sun AM1.5 global illumination is 6.5%. The corresponding open-circuit voltage, short-circuit current density, and fill factor are 0.52 V, 18.2 mA/cm², and 76%, respectively. These results suggest that the 0.95-eV InGaAsP solar cell is suitable as a bottom cell for multijunction solar cells built on InP substrates

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; solar cells; 0.52 V; 0.95 eV; 6.5 percent; III-V semiconductors; InGaAsP; InP substrates; LPE; bottom cell; conversion efficiency; fill factor; high performance type; liquid-phase epitaxy; multijunction cells; one-sun AM1.5 global illumination; open-circuit voltage; overlying InP filters; p-n homojunction; photovoltaic properties; short-circuit current density; solar cells; Current density; Epitaxial growth; Filters; Indium phosphide; Lighting; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.46384

Filename

46384