Title :
Photovoltaic properties of 0.95-eV p-n InGaAsP homojunction solar cells prepared by liquid-phase epitaxy
Author :
Shen, C.C. ; Chang, Pan-Tze ; Choi, Kwan-Yiu
Author_Institution :
Center for Solid State Electron. Res., Arizona State Univ., Tempe, AZ, USA
fDate :
2/1/1990 12:00:00 AM
Abstract :
High-performance 0.95-eV p-n InGaAsP homojunction solar cells fabricated by liquid-phase epitaxy (LPE) are discussed. The best conversion efficiency obtained from cells with overlying InP filters under one-sun AM1.5 global illumination is 6.5%. The corresponding open-circuit voltage, short-circuit current density, and fill factor are 0.52 V, 18.2 mA/cm2, and 76%, respectively. These results suggest that the 0.95-eV InGaAsP solar cell is suitable as a bottom cell for multijunction solar cells built on InP substrates
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; semiconductor growth; solar cells; 0.52 V; 0.95 eV; 6.5 percent; III-V semiconductors; InGaAsP; InP substrates; LPE; bottom cell; conversion efficiency; fill factor; high performance type; liquid-phase epitaxy; multijunction cells; one-sun AM1.5 global illumination; open-circuit voltage; overlying InP filters; p-n homojunction; photovoltaic properties; short-circuit current density; solar cells; Current density; Epitaxial growth; Filters; Indium phosphide; Lighting; Photovoltaic cells; Photovoltaic systems; Solar power generation; Substrates; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
