DocumentCode :
88248
Title :
A Current-Mode, Low Out-of-Band Noise LTE Transmitter With a Class-A/B Power Mixer
Author :
Codega, Nicola ; Rossi, P. ; Pirola, A. ; Liscidini, Antonio ; Castello, Rinaldo
Author_Institution :
Marvell Italy SRL, Pavia, Italy
Volume :
49
Issue :
7
fYear :
2014
fDate :
Jul-14
Firstpage :
1627
Lastpage :
1638
Abstract :
A complete SAW-less transmitter meeting LTE requirements is presented. High power efficiency and low out-of-band noise are obtained exploiting fully current operation of an analog baseband followed by a class-A/B power mixer. Out-of-band emissions are limited by filtering noise and DAC replicas right before the signal up-conversion through a current-mode Biquad feeding directly the power-mixer. The transmitter, implemented in 55 nm CMOS technology, shows -158 dBc/Hz RX-band noise emission at 30 MHz offset for LTE10, while consuming 96 and 34 mW from the single 1.8 V power supply at 4 and -10 dBm output power, respectively. ACLR is always below -42 dBc up to 4 dBm for both LTE10 and LTE20.
Keywords :
CMOS integrated circuits; Long Term Evolution; mixers (circuits); radio transmitters; ACLR; CMOS technology; DAC replicas; LTE10; LTE20; RX-band noise emission; SAW-less transmitter; class-A-B power mixer; current-mode Biquad feeding; filtering noise; frequency 30 MHz; high power efficiency; long-term evolution; low out-of-band noise; low out-of-band noise LTE transmitter; power 34 mW; power 96 mW; size 55 nm; surface acoustic wave; voltage 1.8 V; Baseband; Mirrors; Mixers; Noise; Resistors; Transceivers; Transmitters; 3G; ACLR; Biquad; CMOS integrated circuit; EVM; active mixer; baseband; class A; class A/B; current mode; high efficiency; long-term evolution (LTE); mobile communications; out-of-band noise; phase noise; radio frequency; transmitter; voltage mode;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2014.2315643
Filename :
6803088
Link To Document :
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