Title :
MNOS-BORAM memory characteristics
Author :
Lodi, Robert J. ; Wegener, H.A.Richard ; Borovicka, Millicent B. ; Kosicki, Bernard B. ; Pogemiller, Thomas A. ; Eklund, Marshall W.
fDate :
10/1/1976 12:00:00 AM
Abstract :
This paper describes the characteristics of a block-oriented random-access memory (BORAM) system which uses a custom-designed 2-kbit MNOS memory array for information storage. Delivery of two fully functional memory systems has been a significant achievement in the development of the MNOS memory technology. The organizational concepts and performance characteristics of both the memory system and the MNOS memory array are discussed, including speed, data transfer rate, and retention.
Keywords :
Digital integrated circuits; Monolithic integrated circuits; Random-access storage; Semiconductor storage devices; digital integrated circuits; monolithic integrated circuits; random-access storage; semiconductor storage devices; Data security; Helium; Information security; Nonvolatile memory; Power dissipation; Power system security; Propagation delay; Random access memory; Read-write memory; Semiconductor memory;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1976.1050790
