Title :
Overview of Dual-Active-Bridge Isolated Bidirectional DC–DC Converter for High-Frequency-Link Power-Conversion System
Author :
Biao Zhao ; Qiang Song ; Wenhua Liu ; Yandong Sun
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
High-frequency-link (HFL) power conversion systems (PCSs) are attracting more and more attentions in academia and industry for high power density, reduced weight, and low noise without compromising efficiency, cost, and reliability. In HFL PCSs, dual-active-bridge (DAB) isolated bidirectional dc-dc converter (IBDC) serves as the core circuit. This paper gives an overview of DAB-IBDC for HFL PCSs. First, the research necessity and development history are introduced. Second, the research subjects about basic characterization, control strategy, soft-switching solution and variant, as well as hardware design and optimization are reviewed and analyzed. On this basis, several typical application schemes of DAB-IBDC for HPL PCSs are presented in a worldwide scope. Finally, design recommendations and future trends are presented. As the core circuit of HFL PCSs, DAB-IBDC has wide prospects. The large-scale practical application of DAB-IBDC for HFL PCSs is expected with the recent advances in solid-state semiconductors, magnetic and capacitive materials, and microelectronic technologies.
Keywords :
DC-DC power convertors; zero current switching; zero voltage switching; DAB-IBDC; HFL PCS; capacitive material; dual-active-bridge isolated bidirectional DC-DC converter; hardware design; high-frequency-link power-conversion system; magnetic material; microelectronic technology; optimization; power density; reliability; soft-switching solution; solid-state semiconductor; weight reduction; Bridge circuits; Circuit faults; Inductors; Integrated circuit modeling; Switches; Topology; Bidirectional converters; dc–dc conversion; dual active bridge; efficiency; high-frequency link; isolated converters; nanocrystalline magnetic material; power conversion; power density; wide-band-gap semiconductor;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2013.2289913