The minority carrier injection controlled field-effect transistor (MICFET): a new MOS-gated power transistor structure

Author

Ajit, J.S. ; Baliga, B. Jayant ; Tandon, Sanjay ; Reisman, Arnold

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

39

Issue

8

fYear

1992

fDate

8/1/1992 12:00:00 AM

Firstpage

1954

Lastpage

1960

Abstract

A description is given of a power device structure, the minority carrier injection controlled field-effect transistor (MICFET), in which a floating p region coupled to the drain via a MOSFET is used to inject minority carriers (holes) into the JFET and upper drift region of the DMOSFET to modulate the conductivity of the device during the on-state. The results of device modeling, two-dimensional numerical simulation, and measurements performed on 500-V devices indicate a 30% improvement in on-state current density over the DMOSFET with comparable turn-off times

Keywords

insulated gate field effect transistors; minority carriers; numerical methods; power transistors; semiconductor device models; 500 V; DMOSFET; JFET; MICFET; MOS-gated power transistor structure; MOSFET; PISCES IIB; analytical model; conductivity modulation; device modeling; minority carrier injection controlled field-effect transistor; on-state current density; turn-off times; two-dimensional numerical simulation; Conductivity; Current density; Current measurement; Density measurement; FETs; MOSFET circuits; Numerical models; Numerical simulation; Performance evaluation; Power MOSFET;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.144689

Filename

144689