Title :
The minority carrier injection controlled field-effect transistor (MICFET): a new MOS-gated power transistor structure
Author :
Ajit, J.S. ; Baliga, B. Jayant ; Tandon, Sanjay ; Reisman, Arnold
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
8/1/1992 12:00:00 AM
Abstract :
A description is given of a power device structure, the minority carrier injection controlled field-effect transistor (MICFET), in which a floating p region coupled to the drain via a MOSFET is used to inject minority carriers (holes) into the JFET and upper drift region of the DMOSFET to modulate the conductivity of the device during the on-state. The results of device modeling, two-dimensional numerical simulation, and measurements performed on 500-V devices indicate a 30% improvement in on-state current density over the DMOSFET with comparable turn-off times
Keywords :
insulated gate field effect transistors; minority carriers; numerical methods; power transistors; semiconductor device models; 500 V; DMOSFET; JFET; MICFET; MOS-gated power transistor structure; MOSFET; PISCES IIB; analytical model; conductivity modulation; device modeling; minority carrier injection controlled field-effect transistor; on-state current density; turn-off times; two-dimensional numerical simulation; Conductivity; Current density; Current measurement; Density measurement; FETs; MOSFET circuits; Numerical models; Numerical simulation; Performance evaluation; Power MOSFET;
Journal_Title :
Electron Devices, IEEE Transactions on
