Title :
Variation of velocity/field curve of GaAs in the temperature range 40--180°C
Author :
Bostock, P.A. ; Walsh, Declan
Author_Institution :
University of Oxford, Department of Engineering Science, Oxford, UK
Abstract :
A high-power microwave technique has been used to measure the velocity/field characteristic of GaAs. A small increase in the threshold field has been observed when the temperature was increased from 40°C to 180°C.
Keywords :
III-V semiconductors; carrier mobility;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19690465
