DocumentCode
882682
Title
Two-dimensional analysis of double-gate m.o.s. transistor
Author
Armstrong, G.A. ; Magowan, J.A. ; Burt, D.J.
Author_Institution
Queen´s University of Belfast, Department of Electrical Engineering, Belfast, UK
Volume
5
Issue
25
fYear
1969
Firstpage
633
Lastpage
637
Abstract
The principles of a new form of cascode m.o.s. device are discussed. A method of analysis for the derivation of d.c. characteristics is provided. Theoretical results have been validated by comparison with those of a practical device.
Keywords
metal-insulator-semiconductor devices; transistors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19690474
Filename
4210692
Link To Document