Title :
Mini-MSINC-a minicomputer simulator for MOS circuits with modular built-in model
Author :
Young, T.K. ; Dutton, Robert W.
fDate :
10/1/1976 12:00:00 AM
Abstract :
This correspondence describes Mini-MSINC, a minicomputer simulator for metal-oxide-semiconductor (MOS) integrated nonlinear circuits. Mini-MSINC runs on a HP2100-series minicomputer with 32K words of memory and simulates the nonlinear d.c. and transient responses of MOS transistor circuits. A test circuit of 26 transistors with 150 time points was simulated in 10 min. A modular-model program feature facilitates the alteration and replacement of semiconductor device models. Models other than MOS transistors can be implemented within the constraint of four external and two internal nodes.
Keywords :
Circuit CAD; Field effect integrated circuits; Semiconductor device models; circuit CAD; field effect integrated circuits; semiconductor device models; Circuit optimization; Circuit simulation; Circuit synthesis; Circuit testing; Computational modeling; Geometry; MOSFETs; Microcomputers; Nonlinear circuits; Transient response;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1976.1050805