DocumentCode :
882899
Title :
Extraction of channel length and junction voltage in n+/n/n+ or n+/p/n+ polysilicon resistors
Author :
Rodder, Mark ; Madan, Sudhir K.
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Volume :
39
Issue :
8
fYear :
1992
fDate :
8/1/1992 12:00:00 AM
Firstpage :
1968
Lastpage :
1970
Abstract :
A method for extraction of channel length and junction voltage of poly-Si resistors is presented. Direct extraction of channel length can be performed for n+/n/n+ resistors operating in the nonlinear I-V regime. However, poly-Si resistors may have channel doping opposite to that of the source/drain doping. For this case, a method is presented for extraction of the current-dependent voltage drop across the drain n+/p junction. Importantly, this junction voltage drop can be an appreciable fraction of the drain-to-source bias and thus is important for correct analysis of n+/p/n+ resistors
Keywords :
elemental semiconductors; semiconductor device models; semiconductor junctions; silicon; thin film resistors; channel doping; channel length; current-dependent voltage drop; junction voltage; modelling; n+/n/n+ resistors; n+/p/n+ resistors; nonlinear I-V regime; polycrystalline Si resistors; semiconductor; source/drain doping; Doping; Electron devices; Etching; Implants; Instruments; Process design; Random access memory; Resistors; Semiconductor process modeling; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.144692
Filename :
144692
Link To Document :
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